Congratulations to the following researchers on having their U.S. patents granted by the U.S. Patent and Trademark Office for technologies invented at Argonne:
Method for fabrication of ceramic dielectric films on copper foils
Patent No.: US 9,679,705
- Beihai Ma (ES)
- Steve E. Dorris (ES)
- Balu Balachandran (ES)
Sequential infiltration synthesis for enhancing multiple-patterning lithography
Patent No.: US 9,684,234
- Seth B. Darling (NST)
- Jeffrey W. Elam (ES)
Multi-layered proton-conducting electrolyte
Patent No.: US 9,692,075
- Tae H. Lee (ES)
- Steve E. Dorris (ES)
- Balu Balachandran (ES)
Piezoresistive boron doped diamond nanowire
Patent No.: US 9,696,222
- Anirudha V. Sumant (NST)
Self-assembled tunable networks of sticky colloidal particles
Patent No.: US 9,707,716
- Oleksiy Snezhko (MSD)
Reconfigurable and writable magnetic charge crystals
Patent No.: US 9,711,201
- Wai-Kwong Kwok (MSD)
Want to learn how to protect your inventions, help Argonne grow, and benefit you and your division? Contact Argonne’s Technology Commercialization and Partnerships (TCP) Division at partners@anl.gov.