Congratulations to the following researchers on having their U.S. patents granted by the U.S. Patent and Trademark Office for technologies invented at Argonne:
Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion
Patent No.: US 9,388,499
- Peijun Guo (NST)
- Alex Martinson (MSD)
Method for producing highly conformal transparent conducting oxides
Patent No.: US 9,401,231
- Jeffrey Elam (ES)
- Anil Mane (ES)
Oxygen-free atomic layer deposition of indium sulfide
Patent No.: US 9,382,618
- Alex Martinson (MSD)
- Matthew Weimer (CSE)